Merge pull request #7 from virtual-labs/dev

Update procedure.md

experiment/procedure.md

@@ -14,8 +14,8 @@ The - and + buttons change the gate voltage by ±0.01±0.01\\pm 0.01 V.
 
 When the metal and the semicondutor are electrically connected, electrons flow from the material with a low work function to the material with a high work function. This current flow stops when a built-in voltage is established that is equal to the work function difference, 
 
-$$Vbi\=ϕm−ϕsVbi\=ϕm−ϕsV\_{bi}=\\phi\_m-\\phi\_s$$.
+$$Vbi=ϕm−ϕsVbi=ϕm−ϕsV_{bi}=\phi_m-\phi_s$$.
 
 The work function of a semiconductor depends on the electron affinity χsχs\\chi\_s and the doping, 
 
-$$ϕs\=χs+Ec−EFϕs\=χs+Ec−EF\\phi\_s=\\chi\_s+E\_c-E\_F$$.
+$$ϕs=χs+Ec−EFϕs=χs+Ec−EF\phi_s=\chi_s+E_c-E_F$$.