From eda9594d806b9e1a41b67b3dffbd3e152e6d29ae Mon Sep 17 00:00:00 2001 From: Subhasis mahata Date: Mon, 4 Nov 2024 14:12:56 +0530 Subject: [PATCH] Update procedure.md --- experiment/procedure.md | 4 ++-- 1 file changed, 2 insertions(+), 2 deletions(-) diff --git a/experiment/procedure.md b/experiment/procedure.md index 80d34bf..8546888 100644 --- a/experiment/procedure.md +++ b/experiment/procedure.md @@ -14,8 +14,8 @@ The - and + buttons change the gate voltage by ±0.01±0.01\\pm 0.01 V. When the metal and the semicondutor are electrically connected, electrons flow from the material with a low work function to the material with a high work function. This current flow stops when a built-in voltage is established that is equal to the work function difference, -$$Vbi\=ϕm−ϕsVbi\=ϕm−ϕsV\_{bi}=\\phi\_m-\\phi\_s$$. +$$Vbi=ϕm−ϕsVbi=ϕm−ϕsV_{bi}=\phi_m-\phi_s$$. The work function of a semiconductor depends on the electron affinity χsχs\\chi\_s and the doping, -$$ϕs\=χs+Ec−EFϕs\=χs+Ec−EF\\phi\_s=\\chi\_s+E\_c-E\_F$$. +$$ϕs=χs+Ec−EFϕs=χs+Ec−EF\phi_s=\chi_s+E_c-E_F$$.